{"product_id":"next-generation-mram-development-9783838351926","title":"Next Generation MRAM Development","description":"\u003cp\u003e • Author(s): Masood Qazi\u003cbr\u003e • Publisher: LAP Lambert Academic Publishing\u003cbr\u003e • Publisher Imprint: LAP Lambert Academic Publishing\u003cbr\u003e • BISAC: Hardware - General\u003c\/p\u003e\u003cp\u003eOnly recently has the possibility of a universal memory, a fast random access memory that retains its state during complete power-down, turned into a realizable opportunity. Such a memory can eliminate static power, improve system reliability in the face of power interruption, and eliminate the need for a separate FLASH memory module, reducing system component count. One candidate in the race for a universal memory is magnetoresistive random access memory (MRAM). In the development of MRAM, design challenges related to isolating memory elements, obtaining a compatible operating point with CMOS technology, and sensing data reliably have emerged. Therefore, there still exists a barrier to achieving the cost and performance characteristics of traditional volatile solid state memories---SRAM and DRAM. In this work, a 4kb MRAM array is designed to evaluate the feasibility of a promising new form of MRAM based on the phenomenon of spin torque transfer switching. The design of the test site and measurement setup is discussed, showing how to explore a multidimensional parameter space of operating conditions to obtain a viable design point for the next generation of MRAM technology.\u003c\/p\u003e","brand":"LAP Lambert Academic Publishing","offers":[{"title":"Paperback","offer_id":47581732602007,"sku":"9783838351926","price":5442.0,"currency_code":"INR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0666\/3471\/1191\/files\/9783838351926.webp?v=1774921207","url":"https:\/\/atlanticbooks.com\/products\/next-generation-mram-development-9783838351926","provider":"Atlantic Books","version":"1.0","type":"link"}