{"product_id":"temperature-dependent-current-voltage-measurements-of-neutron-irradiated-al0-27ga0-73n-gan-modulation-doped-field-effect-transistors-9781249836568","title":"Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n\/Gan Modulation Doped Field Effect Transistors","description":"\u003cp\u003e • Author(s): Troy A. Uhlman\u003cbr\u003e • Publisher: Biblioscholar\u003cbr\u003e • Publisher Imprint: Biblioscholar\u003cbr\u003e • BISAC: General\u003c\/p\u003e\u003cp\u003eIn this research, the first ever neutron irradiation study of AlGaN\/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n\/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).\u003c\/p\u003e","brand":"Biblioscholar","offers":[{"title":"Paperback","offer_id":46862895153303,"sku":"9781249836568","price":5130.0,"currency_code":"INR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0666\/3471\/1191\/files\/9781249836568.webp?v=1769968029","url":"https:\/\/atlanticbooks.com\/products\/temperature-dependent-current-voltage-measurements-of-neutron-irradiated-al0-27ga0-73n-gan-modulation-doped-field-effect-transistors-9781249836568","provider":"Atlantic Books","version":"1.0","type":"link"}