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Molecular Beam Epitaxy: Materials And Applications For Electronics And Optoelectronics

by Asahi
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Original price Rs. 21,477.00
Original price Rs. 21,477.00 - Original price Rs. 21,477.00
Original price Rs. 21,477.00
Current price Rs. 15,034.00
Rs. 15,034.00 - Rs. 15,034.00
Current price Rs. 15,034.00

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Book cover type: Hardcover
  • ISBN13: 9781119355014
  • Binding: Hardcover
  • Subject: Engineering
  • Publisher: Wiley
  • Publisher Imprint: Wiley
  • Publication Date:
  • Pages: 354
  • Original Price: USD 242.95
  • Language: English
  • Edition: N/A
  • Item Weight: 1112 grams

About the Book Covers both the fundamentals and the state-of-the-art technology used for MBE</b> Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III-V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. <ul> <li>Includes chapters on the fundamentals of MBE</li> <li>Covers new challenging researches in MBE and new technologies </li> <li>Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners</li> <li>Part of the Materials for Electronic and Optoelectronic Applications series</li> </ul> Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.