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Silicon Carbide Power Devices: Characteristics, Test and Application

by Yuan Gao , Yan Zhang
Save 35% Save 35%
Current price ₹12,810.00
Original price ₹19,707.00
Original price ₹19,707.00
Original price ₹19,707.00
(-35%)
₹12,810.00
Current price ₹12,810.00

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Book cover type: Hardcover
  • ISBN13: 9789819634798
  • Binding: Hardcover
  • Subject: N/A
  • Publisher: Springer
  • Publisher Imprint: Springer
  • Publication Date:
  • Pages: 703
  • Original Price: EUR 174.39
  • Language: English
  • Edition: N/A
  • Item Weight: 1265 grams
  • BISAC Subject(s): Electronics / Semiconductors

Fundamentals of Power Semiconductor Devices.- SiC Diode Main Characteristics.- Interpretation, Testing, and Application of SiC MOSFET Parameters.- Comparison of SiC and Si Device Characteristics.- Double-Pulse Test.- SiC Device Testing and Failure Analysis Techniques.- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot.- Effects and Mitigation of High dv/dt - Crosstalk.- Impact and Countermeasures of High dv/dt - Common Mode Current.- Effects and Countermeasures of Common Source Inductance.- Drive Circuit.- Main Applications of SiC Devices.

Dr. Yuan Gao received his bachelor's and master's degrees from Xi 'an Jiaotong University in 2012 and 2015, respectively. He is currently the director of Application Test Center at Global Power Technology Co., Ltd., a member of the power electronics committee of China Electrotechnical Society (CES), the industry mentor of China Advanced Semiconductor Industry Innovation Alliance (CASA), and an external expert in power supply devices field of Tektronix Inc. He has published 9 academic papers and holds 4 patents. His monograph "Silicon Carbide Power Devices: Characteristics, Testing and Application Technology" has been included in the "14th Five-Year Plan" national key publications.

Yan Zhang is an associate professor, Ph.D. supervisor in Electronical Engineering at Xi'an Jiaotong University. He has led 2 National Natural Science Foundation Programs, 2 sub-projects of the National Key Research and Development Program, and over 20 collaborative projects with enterprises. He has co-authored more than 100 technical papers in peer-reviewed journals and conference papers and holds more than 10 China-issued patents. His research interests include SiC device application, topology, model and control of power electronic systems, high-efficiency high-density resonant power converters, and power electronics equipment reliability.

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