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Compact Modeling for MOSFET Devices

by Oana Moldovan
Save 12% Save 12%
Current price ₹5,444.00
Original price ₹6,195.00
Original price ₹6,195.00
Original price ₹6,195.00
(-12%)
₹5,444.00
Current price ₹5,444.00

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Book cover type: Paperback
  • ISBN13: 9783639148824
  • Binding: Paperback
  • Subject: N/A
  • Publisher: VDM Verlag
  • Publisher Imprint: VDM Verlag
  • Publication Date:
  • Pages: 152
  • Original Price: GBP 48.97
  • Language: English
  • Edition: N/A
  • Item Weight: 232 grams
  • BISAC Subject(s): Electronics / General

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

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