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Dynamic RAM: Technology Advancements

by Muzaffer A. Siddiqi
Save 35% Save 35%
Current price ₹7,470.00
Original price ₹11,492.00
Original price ₹11,492.00
Original price ₹11,492.00
(-35%)
₹7,470.00
Current price ₹7,470.00

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Book cover type: Paperback
  • ISBN13: 9781138077058
  • Binding: Paperback
  • Subject: N/A
  • Publisher: Taylor & Francis
  • Publisher Imprint: CRC Press
  • Publication Date:
  • Pages: 382
  • Original Price: GBP 89.99
  • Language: English
  • Edition: N/A
  • Item Weight: 710 grams
  • BISAC Subject(s): Computer Engineering, Electronics / Circuits / General, and Electronics / Microelectronics

Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components--access transistor, storage capacitor, and peripherals--DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.

Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.

Topics Include:

  • DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
  • Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
  • How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
  • Various types of leakages and power consumption reduction methods in active and sleep mode
  • Various types of SAs and yield enhancement techniques employing ECC and redundancy

A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.

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