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Mos (Metal Oxide Semiconductor) Physics and Technology

by Edward H. Nicollian
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Current price ₹16,958.00
Original price ₹19,661.00
Original price ₹19,661.00
Original price ₹19,661.00
(-14%)
₹16,958.00
Current price ₹16,958.00

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Book cover type: Paperback
  • ISBN13: 9780471430797
  • Binding: Paperback
  • Subject: N/A
  • Publisher: Wiley-Interscience
  • Publisher Imprint: Wiley-Interscience
  • Publication Date:
  • Pages: 928
  • Original Price: USD 206.95
  • Language: English
  • Edition: N/A
  • Item Weight: 1284 grams
  • BISAC Subject(s): Electronics / Semiconductors and Physics / General

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.

John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.

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