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Next Generation MRAM Development

by Masood Qazi
Save 12% Save 12%
Current price ₹5,442.00
Original price ₹6,195.00
Original price ₹6,195.00
Original price ₹6,195.00
(-12%)
₹5,442.00
Current price ₹5,442.00

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Book cover type: Paperback
  • ISBN13: 9783838351926
  • Binding: Paperback
  • Subject: N/A
  • Publisher: LAP Lambert Academic Publishing
  • Publisher Imprint: LAP Lambert Academic Publishing
  • Publication Date:
  • Pages: 144
  • Original Price: GBP 48.97
  • Language: English
  • Edition: N/A
  • Item Weight: 223 grams
  • BISAC Subject(s): Hardware / General

Only recently has the possibility of a universal memory, a fast random access memory that retains its state during complete power-down, turned into a realizable opportunity. Such a memory can eliminate static power, improve system reliability in the face of power interruption, and eliminate the need for a separate FLASH memory module, reducing system component count. One candidate in the race for a universal memory is magnetoresistive random access memory (MRAM). In the development of MRAM, design challenges related to isolating memory elements, obtaining a compatible operating point with CMOS technology, and sensing data reliably have emerged. Therefore, there still exists a barrier to achieving the cost and performance characteristics of traditional volatile solid state memories---SRAM and DRAM. In this work, a 4kb MRAM array is designed to evaluate the feasibility of a promising new form of MRAM based on the phenomenon of spin torque transfer switching. The design of the test site and measurement setup is discussed, showing how to explore a multidimensional parameter space of operating conditions to obtain a viable design point for the next generation of MRAM technology.

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