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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

by Yue Hao
Save 35% Save 35%
Current price ₹4,071.00
Original price ₹6,263.00
Original price ₹6,263.00
Original price ₹6,263.00
(-35%)
₹4,071.00
Current price ₹4,071.00

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Book cover type: Paperback
  • ISBN13: 9780367574369
  • Binding: Paperback
  • Subject: N/A
  • Publisher: Taylor & Francis
  • Publisher Imprint: CRC Press
  • Publication Date:
  • Pages: 412
  • Original Price: GBP 47.99
  • Language: English
  • Edition: N/A
  • Item Weight: 771 grams
  • BISAC Subject(s): Physics / General, Electronics / Microelectronics, and Microwaves

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

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