Skip to content

Booksellers & Trade Customers: Sign up for online bulk buying at trade.atlanticbooks.com for wholesale discounts

Booksellers: Create Account on our B2B Portal for wholesale discounts

Reliability of high-k / metal gate field-effect transistors considering circuit operational constraints

by Steve Kupke
Save 14% Save 14%
Current price ₹3,459.00
Original price ₹4,009.00
Original price ₹4,009.00
Original price ₹4,009.00
(-14%)
₹3,459.00
Current price ₹3,459.00

Imported Edition - Ships in 18-21 Days

Free Shipping in India on orders above Rs. 500

Request Bulk Quantity Quote
+91
Book cover type: Paperback
  • ISBN13: 9783741208690
  • Binding: Paperback
  • Subject: N/A
  • Publisher: Bod - Books on Demand
  • Publisher Imprint: Bod - Books on Demand
  • Publication Date:
  • Pages: 126
  • Original Price: USD 40.9
  • Language: English
  • Edition: N/A
  • Item Weight: 159 grams
  • BISAC Subject(s): Construction / Electrical

After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage currents for gate oxide thicknesses below 2 nm. The introduction of high-k metal gate stacks guaranteed the trend towards smaller transistor dimensions. The implementation of HfO2, as high-k dielectric, also lead to a substantial number of manufacturing and reliability challenges. The deterioration of the gate oxide properties under thermal and electric stress jeopardizes the circuit operation and hence needs to be comprehensively understood. As a starting point, 6T static random access memory cells were used to identify the different single device operating conditions. The strongest deterioration of the gate stack was found for nMOS devices under positive bias temperature instability (PBTI) stress, resulting in a severe threshold voltage shift and increased gate leakage current. A detailed investigation of physical origin and temperature and voltage dependency was done. The reliability issues were caused by the electron trapping into already existing HfO2 oxygen vacancies. The oxygen vacancies reside in different charge states depending on applied stress voltages. This in return also resulted in a strong threshold voltage and gate current relaxation after stress was cut off. The reliability assessment using constant voltage stress does not reflect realistic circuit operation which can result in a changed degradation behaviour. Therefore, the constant voltage stress measurement were extended by considering CMOS operational constraints, where it was found that the supply voltage frequently switches between the gate and drain terminal. The additional drain (off-state) bias lead to an increased Vt relaxation in comparison to zero bias voltage. The off-state influence strongly depended on the gate length and became significant for short channel devices. The influence of the off-state bias on the dielectric break

Steve Kupke, studied physics at the Technical University Dresden from 2003 to 2009. After his master thesis he held several jobs as a scientist in Kazakhstan, Tajikistan and New Zealand. In 2011 he returned to Dresden to do his PhD in the field of microelectronics at the NamLab gGmbH, TU Dresden. Since then, he has built up his own company, named UNIPOLAR, for designing scientific themes and illustrations printed on fair-trade and organic clothes.

Trusted for over 49 years

Family Owned Company

Secure Payment

All Major Credit Cards/Debit Cards/UPI & More Accepted

New & Authentic Products

India's Largest Distributor

Need Support?

Whatsapp Us