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Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors

by Troy A. Uhlman
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Current price ₹5,130.00
Original price ₹5,448.00
Original price ₹5,448.00
Original price ₹5,448.00
(-6%)
₹5,130.00
Current price ₹5,130.00

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Book cover type: Paperback
  • ISBN13: 9781249836568
  • Binding: Paperback
  • Subject: N/A
  • Publisher: Biblioscholar
  • Publisher Imprint: Biblioscholar
  • Publication Date:
  • Pages: 192
  • Original Price: USD 57.95
  • Language: English
  • Edition: N/A
  • Item Weight: 354 grams
  • BISAC Subject(s): General

In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).

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