Over the past two decades we have witnessed the increasing popularity of the internet of things. The vision of billions of connected objects, able to interact with their environment, is the key driver directing the development of future communication devices. Today, power consumption as well as the cost and size of radios remain some of the key obstacles towards fulfilling this vision.
Ultra-Low Power FM-UWB Transceivers for IoT presents the latest developments in the field of low power wireless communication. It promotes the FM-UWB modulation scheme as a candidate for short range communication in different IoT scenarios. The FM-UWB has the potential to provide exactly what is missing today. This spread spectrum technique enables significant reduction in transceiver complexity, making it smaller, cheaper and more energy efficient than most alternative options.
The book provides an overview of both circuit-level and architectural techniques used in low power radio design, with a comprehensive study of state-of-the-art examples. It summarizes key theoretical aspects of FM-UWB with a glimpse at potential future research directions. Finally, it gives an insight into a full FM-UWB transceiver design, from system level specifications down to transistor level design, demonstrating the modern power reduction circuit techniques.
Ultra-Low Power FM-UWB Transceivers for IoT is a perfect text and reference for engineers working in RF IC design and wireless communication, as well as academic staff and graduate students engaged in low power communication systems research.
Enz, Christian: - Christian Enz, PhD, Swiss Federal Institute of Technology (EPFL), 1989. He is currently Professor at EPFL, Director of the Institute of Microengineer- ing and head of the IC Lab. Until April 2013 he was VP at the Swiss Center for Electronics and Microtechnology (CSEM) in Neucha^tel, Switzerland where he was heading the Integrated and Wireless Systems Division. Prior to joining CSEM, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for RF applications. His technical interests and expertise are in the field of ultralow- power analog and RF IC design, wireless sensor networks and semiconductor device modeling. Together with E. Vittoz and F. Krummenacher he is the developer of the EKV MOS transistor model. He is the author and co- author of more than 250 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. He is an IEEE Fellow and an individual member of the Swiss Academy of Engineering Sciences (SATW). He has been an elected member of the IEEE Solid-State Circuits Society (SSCS) AdCom from 2012 to 2014 and was Chair of the IEEE SSCS Chapter of Switzerland until 2017.
Kopta, Vladimir: - Vladimir Kopta received his B.S. degree in electrical and electronics engi- neering from the University of Belgrade, Serbia, in 2011 and the M.S. and Ph.D. degrees from the Swiss Federal Institute of Technology (EPFL), Switzerland, in 2013 and 2018. Since 2018 he has been working as an R&D engineer at theIntegrated and Wireless Systems Division of the Swis Center for Electronics and Microtech- nology (CSEM), Neuchatel, Switzerland. Focus of his work is the design of low power analog and RF integrated circuits for wireless communications as well as power management for systems on chip.
